2012. 1. 18 1/6 semiconductor technical data kf4n20ld/i n channel mos field effect transistor revision no : 1 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for led lighting and switching mode power supplies. features h v dss(min.) = 200v, i d = 3.6a h drain-source on resistance : r ds(on) =1.15 ? (max) @v gs =10v h qg(typ.) =2.9nc h v th(max.) = 2v maximum rating (tc=25 ? ) * : drain current limited by maximum junction temperature. characteristic symbol rating unit drain-source voltage v dss 200 v gate-source voltage v gss ? 20 v drain current @t c =25 ? i d 3.6 a @t c =100 ? 2.2 pulsed (note1) i dp 7* single pulsed avalanche energy (note 2) e as 52 mj repetitive avalanche energy (note 1) e ar 3 mj peak diode recovery dv/dt (note 3) dv/dt 5.5 v/ns drain power dissipation t c =25 ? p d 31 w derate above25 ? 0.25 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 4.0 ? /w thermal resistance, junction-to- ambient r thja 110 ? /w dpak (1) dim millimeters a a b b c c d d f ff h g k g j l k l m 0.96 max0.90 max e e m n h 0.70 min n 123 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ j 1. gate2. drain 3. source ipak(1) 123 a a b b c c d d e e f ff g g h h j j l l 0.96 max k m p m n p n k 6.6 0.2 + _ 6.1 0.2 + _ 5.34 0.3 + _ 0.7 0.2 + _ 9.3 0.3 + _ 2.3 0.2 + _ 0.76 0.1 + _ 2.3 0.1 + _ 0.5 0.1 + _ 1.8 0.2 + _ 0.5 0.1 + _ 1.0 0.1 + _ + _ 1.02 0.3 dim millimeters 1. gate2. drain 3. source pin connection kf4n20ld KF4N20LI downloaded from: http:///
2012. 1. 18 2/6 kf4n20ld/i revision no : 1 electrical characteristics (tc=25 ? ) note 1) repetivity rating : pulse width limited by junction temperature. note 2) l = 78mh, i s =1a, v dd =50v, r g = 25 ? , starting t j = 25 ? . note 3) i s ? 2a, di/dt ? 300a/ k , v dd ? bv dss , starting t j = 25 ? . note 4) pulse test : pulse width ? 300 k , duty cycle ? 2%. note 5) essentially independent of operating temperature. kf4n20 ld kf4n20 li marking characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 200 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 ? - 0.2 - v/ ? drain cut-off current i dss v ds =200v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 1.0 - 2.0 v gate leakage current i gss v gs = ? 20v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =1.8a - 0.85 1.15 ? v gs =5v, i d =1.8a 0.89 1.20 dynamic total gate charge q g v ds =160v, i d =3.6a v gs =5v (note4,5) - 2.9 3.8 nc gate-source charge q gs - 0.6 - gate-drain charge q gd - 2.2 - turn-on delay time t d(on) v dd =100v, i d =3.6a r g =25 ? (note4,5) v gs =5v - 10 - ns turn-on rise time t r - 20 - turn-off delay time t d(off) - 15 - turn-off fall time t f - 15 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 170 220 pf output capacitance c oss - 25 - reverse transfer capacitance c rss - 4.0 - source-drain diode ratings continuous source current i s v gs 2012. 1. 18 3/6 kf4n20ld/i revision no : 1 v gs = 3v 0 3.02.5 2.0 1.5 1.0 0.5 246 6 8 downloaded from: http:///
2012. 1. 18 4/6 kf4n20ld/i revision no : 1 drain current i d (a) gate - charge q g (nc) drain - source voltage v ds (v) fig8. q g - v gs fig9. safe operation area gate - source voltage v gs (v) 10 10 10 0.1 1 1 1 0.01 100 1000 0 21 54 3 75 150 125 50 100 02 5 drain current i d (a) c junction temperature t j ( ) fig10. i d - t j t c = 25 t j = 150 single pulse c c fig 7. c - v ds drain - source voltage v ds (v) capacitance (pf) 1 10 100 1000 0 5 15 25 35 10 20 30 40 c rss c oss c iss dc 10ms 1ms 100 s operation in this area is limited by r ds(on) 0 1210 62 4 8 78 3 1 5 4 6 2 0 i d =4a v ds = 40v v ds = 160v 10 s time (sec) fig11. transient thermal response curve transient thermal resistance 10 -3 10 -2 10 -1 10 0 10 -4 0.1 10 1 single pulse duty =0.5 0.02 0.05 0. 10 0.20 0.01 - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm downloaded from: http:///
2012. 1. 18 5/6 kf4n20ld/i revision no : 1 fig12. gate charge i d v ds v gs v gs v ds v gs 1.0 ma r l 10v 5 v 25 r l q g q gd q gs q t p fig14. resistive load switching fig13. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 l time e as = li as 2 bv dss - v dd bv dss 12 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss downloaded from: http:///
2012. 1. 18 6/6 kf4n20ld/i revision no : 1 fig15. source - drain diode reverse recovery and dv /dt l i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.5 v dss downloaded from: http:///
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